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NTMFS4707N Power MOSFET
30 V, 17 A, Single N-Channel, SO-8 Flat Lead
Features
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* * * *
Fast Switching Times Low Gate Charge Low RDS(on) Low Inductance SO-8 Package
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V(BR)DSS 30 V
RDS(on) TYP 10 mW @ 10 V 13.5 mW @ 4.5 V
ID MAX 17 A
Applications
* Notebooks, Graphics Cards * DC-DC Converters * Synchronous Rectification
MAXIMUM RATINGS (TJ = 25C unless otherwise stated)
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current C rrent (Note 1) Steady State t 10 s Power Dissipation (Note 1) Steady State t 10 s Continuous Drain C rrent (Note 2) Current Power Dissipation (Note 2) Pulsed Drain Current St d Steady State TA = 25C TA = 85C TA = 25C PD TA = 25C 25 C 6.25 TA = 25C TA = 85C TA = 25C tp 10 ms PD IDM TJ, TSTG IS EAS ID 6.9 4.9 1.0 51 -55 to 150 6.25 245 W A C A mJ A Symbol VDSS VGS ID Value 30 20 10.2 7.4 17 2.3 W Unit V V A
N-Channel D
G S
MARKING DIAGRAM
D
1
SO-8 FLAT LEAD CASE 488AA STYLE 1 4707N A Y WW
S S S G
D 4707N AYWW D D
Operating Junction and Storage Temperature Source Current (Body Diode) Single Pulse Drain-to-Source Avalanche Energy (VDD = 25 V, VGS = 10 V, IPK = 7.0 A, L = 10 mH, RG = 25 W) Lead Temperature for Soldering Purposes (1/8" from case for 10 s)
= Specific Device Code = Assembly Location = Year = Work Week
TL
260
C
ORDERING INFORMATION
Device Package Shipping NTMFS4707NT1G NTMFS4707NT3G SO-8 FL 1500 Tape & Reel (Pb-Free) SO-8 FL 5000 Tape & Reel (Pb-Free)
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter Junction-to-Ambient - Steady State (Note 1) Junction-to-Ambient - t 10 s (Note 1) Junction-to-Ambient - Steady State (Note 2) Symbol RqJA RqJA RqJA Value 55 20 122.5 Unit C/W
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Surface-mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces). 2. Surface-mounted on FR4 board using the minimum recommended pad size (Cu area = 0.412 in sq).
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
(c) Semiconductor Components Industries, LLC, 2004
1
December, 2004 - Rev. 1
Publication Order Number: NTMFS4707N/D
NTMFS4707N
ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise specified)
Parameter OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage Drain-to-Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current V(BR)DSS V(BR)DSS/TJ IDSS TJ = 25C TJ = 125C VGS = 0 V, ID = 250 mA 30 6.5 1.0 50 100 nA V mV/C mA Symbol Test Condition Min Typ www..com Max Unit
VGS = 0 V VDS = 24 V V,
Gate-to-Source Leakage Current ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain-to-Source On Resistance
IGSS
VDS = 0 V, VGS = 20V
VGS(TH) VGS(TH)/TJ RDS(on) ()
VGS = VDS, ID = 250 mA
1.0 5.0
2.5
V mV/C
VGS = 10 V, ID = 10 A VGS = 4.5 V, ID = 8.0 A
10 13.5 20
13 17
mW
Forward Transconductance
gFS
VDS = 15 V, ID = 10 A
S
CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Threshold Gate Charge Gate-to-Source Charge Gate-to-Drain Charge Gate Resistance SWITCHING CHARACTERISTICS (Note 4) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time td(on) tr td(off) tf VGS = 10 V, VDD = 15 V, ID = 1.0 A, RG = 3.0 W 6.0 5.0 19 11 ns CISS COSS CRSS QG(TOT) QG(TH) QGS QGD RG VGS = 4 5 V VDS = 15 V; ID = 10 A 4.5 V, VGS = 0 V, f = 1.0 MHz, VDS = 24 V , , 735 295 80 7.5 1.1 2.0 3.6 2.4 W 15 nC pF
DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD VGS = 0 V IS = 6 25 A V, 6.25 TJ = 25C TJ = 125C 0.79 0.59 26 VGS = 0 V, dIS/dt = 100 A/ms, IS = 6.25 A 14 12 19 nC ns 1.0 V
Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge
tRR ta tb QRR
3. Pulse Test: pulse width 300 ms, duty cycle 2%. 4. Switching characteristics are independent of operating junction temperatures.
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NTMFS4707N
TYPICAL CHARACTERIZATIONS
www..com 30 VGS = 10 V ID, DRAIN CURRENT (AMPS) 25 20 15 2.8 V 10 5 0 0 1 2 3 4 5 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 2.6 V 2.4 V 0 0 1 2 3 4 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 5 4.5 V 4V 3.8 V 3.4 V 3V TJ = 25C ID, DRAIN CURRENT (AMPS) 36 VDS 10 V 30 24 18 TJ = 125C 12 6 TJ = 25C TJ = -55C
Figure 1. On-Region Characteristics
RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 0.020 VGS = 10 V TJ = 125C RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 0.018
Figure 2. Transfer Characteristics
TJ = 25C 0.014 VGS = 4.5 V VGS = 10 V 0.010
0.015 TJ = 25C TJ = -55C
0.010
0.005
0.006
0 0 5 10 20 15 ID, DRAIN CURRENT (AMPS) 25 30
0.002 0 8 12 16 20 24 ID, DRAIN CURRENT (AMPS)
Figure 3. On-Resistance vs. Drain Current and Temperature
2.0 RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) 1.8 1.6 1.4 1.2 1.0 0.8 0.6 -50 100 -25 0 25 50 75 100 125 150 ID = 17 A VGS = 10 V IDSS, LEAKAGE (nA) 10000 100000
Figure 4. On-Resistance vs. Drain Current and Gate Voltage
VGS = 0 V
TJ = 150C 1000
TJ = 125C
0
5
10
15
20
25
30
TJ, JUNCTION TEMPERATURE (C)
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 5. On-Resistance Variation with Temperature
Figure 6. Drain-to-Source Leakage Current vs. Voltage
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NTMFS4707N
TYPICAL CHARACTERIZATIONS
www..com VGS GATE-TO-SOURCE VOLTAGE (V) , 1600 VDS = 0 V C, CAPACITANCE (pF) 1400 1200 1000 800 600 400 200 0 10 5 VGS 0 VDS CRSS 5 10 15 20 25 COSS CRSS CISS CISS VGS = 0 V 5 VGS = 4.5 V 4 QGS 3 QGD TJ = 25C QT
2
1 0 0 2 ID = 10 A TJ = 25C 4 6 8 QG, TOTAL GATE CHARGE (nC) 10
GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
100 IS, SOURCE CURRENT (AMPS) VDD = 15 V ID = 1 A VGS = 4.5 V t, TIME (ns) 18 15 12 9 6 3 0 1 10 RG, GATE RESISTANCE (OHMS) 100 0
Figure 8. Gate-To-Source and Drain-To-Source Voltage vs. Total Charge
VGS = 0 V TJ = 25C
10
td(off) td(on) tf
tr
1
0.4 0.2 0.6 0.8 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
1
Figure 9. Resistive Switching Time Variation vs. Gate Resistance
EAS, SINGLE PULSE DRAIN-TO-SOURCE AVALANCHE ENERGY (mJ) 1000 ID, DRAIN CURRENT (AMPS) VGS = 20 V SINGLE PULSE TC = 25C 350
Figure 10. Diode Forward Voltage vs. Current
ID = 7 A 300 250 200 150 100 50 0 25 75 100 125 50 TJ, STARTING JUNCTION TEMPERATURE (C) 150
100
10 ms 100 ms 1 ms
10
1
10 ms
0.1 0.01 0.1
RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 1 10
dc 100
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 11. Maximum Rated Forward Biased Safe Operating Area
Figure 12. Maximum Avalanche Energy vs. Starting Junction Temperature
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NTMFS4707N
PACKAGE DIMENSIONS
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SO-8 FLAT LEAD CASE 488AA-01 ISSUE A
2X
0.20 C D 2 D1
6 5
A B
2X
0.20 C
NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS. DIM A A1 b c D D1 D2 E E1 E2 e G K L L1 q MILLIMETERS MIN NOM MAX 0.90 0.99 1.20 0.00 --- 0.05 0.33 0.41 0.51 0.23 0.28 0.33 5.15 BSC 5.10 4.50 4.90 4.22 3.50 --- 6.15 BSC 6.10 5.50 5.80 4.30 3.45 --- 1.27 BSC 0.71 0.51 0.61 --- 0.51 --- 0.71 0.51 0.61 0.20 0.05 0.17 12 _ 0_ ---
E1 2 E
4X
q
c
1 2 3 4
A1
TOP VIEW
3X
0.10 C A 0.10 C SIDE VIEW DETAIL A
C
SEATING PLANE
e DETAIL A
6X
b e/2
1 4
0.10 0.05
CAB c L
STYLE 1: PIN 1. SOURCE 2. SOURCE 3. SOURCE 4. GATE 5. DRAIN 6. DRAIN
K E2 L1
6 5
G
D2 BOTTOM VIEW
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NTMFS4707N
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NTMFS4707N/D

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